Influence of oxygen-plasma posttreatment on the properties of SiO2 films prepared by the electron-beam evaporation method

SiO2 films were deposited on K9 substrate by the electron-beam evaporation method. The influence of oxygen-plasma posttreatment on the properties of SiO2 films was investigated. After oxygen-plasma treatment, it was found that the microdefect density of films reduced. We deduced that the absorption of films also reduced. The treated sample exhibited higher LIDT value compared with the as-deposited sample. However, this study is the preliminary work and optimization by this method will be discussed in our future work.