کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8863454 | 1620284 | 2018 | 33 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dry deposition of N has a major impact on surface water quality in the Taihu Lake region in southeast China
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
علوم زمین و سیارات
علم هواشناسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Human activities have greatly increased the emission of reactive nitrogen (N) to the atmosphere, leading to large increases in N deposition in sensitive ecosystems. However, few have measured both the wet and dry deposition of individual N species in southeast China and their impact on surface water quality. We investigated wet and dry deposition of N, including gaseous NH3, NO2 and HNO3, and particulate NH4+-N and NO3â-N in both the atmosphere and precipitation during a two-year period at three sites in the Taihu Lake region in southeast China. The total N deposition in this region was 64.8â¯kgâ¯Nâ¯haâ1â¯yrâ1 (range: 59.1-70.5â¯kgâ¯Nâ¯haâ1â¯yrâ1). On an annual basis, the ratio of reduced to oxidized N deposition was 1.7, suggesting that the reduced form of N dominates N deposition. Of the annual N deposition, 45.5% was deposited via precipitation, with the remaining via dry deposition. The total gaseous and particulate N deposition was 24.9 and 10.4â¯kgâ¯Nâ¯haâ1â¯yrâ1, respectively. The high N loading in this region has resulted in the reduction of water quality in Taihu Lake. Atmospheric N deposition accounted for 33.3 and 27.5% of the total N loading in Taihu Lake and in water bodies in the region, respectively. We conclude that dry deposition of N is one of the most important sources of surface water pollution and should be taken into account when developing strategies for mitigating water pollution.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Atmospheric Environment - Volume 190, October 2018, Pages 1-9
Journal: Atmospheric Environment - Volume 190, October 2018, Pages 1-9
نویسندگان
Chaopu Ti, Bo Gao, Yongxia Luo, Shuwei Wang, Scott X. Chang, Xiaoyuan Yan,