Enhanced photoresponsivity and hole mobility of MoTe2 phototransistors by using an Al2O3 high-κ gate dielectric

Enhanced photoresponsivity and hole mobility of MoTe2 phototransistors by using an Al2O3 high-κ gate dielectric

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Science Bulletin - Volume 63, Issue 15, 15 August 2018, Pages 997-1005

Wenjie Chen, Renrong Liang, Jing Wang, Shuqin Zhang, Jun Xu,