کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8953915 | 1645972 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A CMOS symmetric self-biased voltage reference
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
This paper presents a novel CMOS voltage reference circuit named symmetric self-biased voltage reference (SSVR), which enables not only to discard the voltage headroom issue of a conventional constant-gm current source and the inevitable need of an extra bias in a modified constant-gm current source, but also to maintain stable bias voltages with strong tolerance against significant variations of power supply and temperature. Test chips of the SSVR were implemented by using a 0.11-μm CMOS process. Measured results demonstrate that the symmetric configuration of the proposed SSVR helps to achieve constant voltage references against the VDD variation from 0.7 to 1.2â¯V and the temperature variation from â15â¯Â°C to 125â¯Â°C. The fabricated chip consumes constant 18.5â¯Î¼A currents for 0.7â¯â¼â¯1.0-V supply voltages and its core occupies the area of 0.04â¯Ãâ¯0.047â¯mm2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 80, October 2018, Pages 28-33
Journal: Microelectronics Journal - Volume 80, October 2018, Pages 28-33
نویسندگان
Minseon Park, Sung Min Park,