High resolution quantitative SIMS analysis of shallow boron implants in silicon using a bevel and image approach

Through the fabrication of bevels with very small slope angles on a shallow boron implanted silicon via a chemical etch, SIMS ion imaging is performed on the exposed surface. Ion image data is then summed, and in conjunction with accurate measurement of the bevel morphology, a shallow boron implant profile produced. The 'bevel-image' profile compares very well with a profile obtained using a 1 keV oxygen beam. To ensure a good dynamic range on the 'bevel-image' profile it is important to clean the bevel with a HF etch, prior to imaging.