کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9566709 | 1388367 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Annealing and amorphous silicon passivation of porous silicon with blue light emission
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Annealing and amorphous silicon passivation of porous silicon with blue light emission Annealing and amorphous silicon passivation of porous silicon with blue light emission](/preview/png/9566709.png)
چکیده انگلیسی
The photoluminescence (PL) of the annealed and amorphous silicon passivated porous silicon with blue emission has been investigated. The N-type and P-type porous silicon fabricated by electrochemical etching was annealed in the temperature range of 700-900 °C, and was coated with amorphous silicon formed in a plasma-enhanced chemical vapor deposition (PECVD) process. After annealing, the variation of PL intensity of N-type porous silicon was different from that of P-type porous silicon, depending on their structure. It was also found that during annealing at 900 °C, the coated amorphous silicon crystallized into polycrystalline silicon, which passivated the irradiative centers on the surface of porous silicon so as to increase the intensity of the blue emission.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 4, 15 November 2005, Pages 1065-1069
Journal: Applied Surface Science - Volume 252, Issue 4, 15 November 2005, Pages 1065-1069
نویسندگان
Yue Zhao, Deren Yang, Dongsheng Li, Minghua Jiang,