Morphology of the Si-ZnO interface

For Si-ZnO heterostructures, prepared by magnetron sputtering, the interface morphology is studied by XPS and UPS. ZnO films on Si(1 1 1) surfaces (H-termination and 7 × 7) were prepared by magnetron sputtering and metal organic molecular beam epitaxy (MOMBE) and are investigated in well defined deposition steps and the interface properties were studied in situ. All samples were handled in situ under ultra high vacuum (UHV) conditions. Up to five different interface phases were detected depending on ZnO preparation. Beside a SiOx film induced by the sputter process, ZnO and Zn2SiO4 phases are resolved. In addition hydrogen, appearing as ZnOHx, is found in considerable concentrations in the films.