A combinatorial analysis of deposition parameters and substrates on performance of μc-Si:H thin films by VHF-PECVD

Influence of silane concentration (SC), substrate temperature (Ts) and substrates on the properties of materials deposited by very high frequency plasma enhanced chemical vapor deposition was studied. SC and Ts had a great impact on the structure of materials, especially changed from amorphous to microcrystalline silicon. The results of FTIR (flourier transform infrared) showed that material fabricated at higher temperature appeared a little oxygen peak located at 1017 cm−1, which means that oxygen easily entered into the materials at higher Ts. However, microcrystalline silicon thin film prepared at low Ts easily adsorbed oxygen characterized with oxygen content increased largely with the prolong of time. The results of Raman evidently showed that crystalline volume fraction (Xc) also depended on the type and texture of substrate. Higher texture means higher volume crystalline fraction for the same type of substrate.