کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9566813 | 1503712 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thickness dependence of properties of ZnO:Ga films deposited by rf magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Gallium-doped zinc oxide (ZnO:Ga) films are prepared on glass substrates by rf magnetron sputtering at room temperature. The structural, electrical and optical properties of the ZnO:Ga films with various thickness are studied in detail. The crystal structure of the ZnO:Ga films is hexagonal wurtzite. The orientation for all the obtained films is along the c-axis perpendicular to the substrate. It is observed that with an increase in film thickness, the crystallite sizes of the films are increased. The lowest electrical resistivity among the films is found to be about 3.1 Ã 10â4 Ω cm and the average transmittance for all films including substrates is over 83% in the visible range.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 245, Issues 1â4, 30 May 2005, Pages 310-315
Journal: Applied Surface Science - Volume 245, Issues 1â4, 30 May 2005, Pages 310-315
نویسندگان
Xuhu Yu, Jin Ma, Feng Ji, Yuheng Wang, Chuanfu Cheng, Honglei Ma,