کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9566864 | 1503707 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microstructure and oxidation of hot-dip aluminized titanium at high temperature
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
High-temperature diffusion of a hot-dip aluminized titanium is conducted to study microstructure changes and oxidation behavior of the aluminized titanium. After aluminizing, the titanium substrate is covered by a black layer in which tiny block-shaped TiAl3 particles are scattered in aluminum matrix. Based on the diffusion experiment results, the thickness of the aluminum diffusion layer at 800 °C increases with diffusion time. However, the aluminum diffusion layer at 900 °C grows and reaches its maximum thickness in 6 h, and then the thickness of the aluminum diffusion layer is reduced with prolonged diffusion time. An inversion of the diffusion layer thickness versus time appears for the aluminized titanium treated at 1000 °C, and the thickness of the diffusion layer keeps declining with diffusion time. The phases present in the outer and middle sublayers are titanium-rich TiAl3 and equilibrium TiAl3, respectively. However, the phase in inner sublayer changes from titanium-rich TiAl3 to TiAl2 and TiAl as diffusion temperature and time increase. Through energy-dispersive X-ray and X-ray diffraction analysis, the oxides formed in the oxidation process are Al2O3 and Al2TiO5. Although the oxide scale formed on the surface of the aluminized titanium has an insufficient stability and integrity, the thermal oxidation resistance of the aluminized titanium is still improved by over 5 times compared with that of the pure titanium.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 250, Issues 1â4, 31 August 2005, Pages 238-246
Journal: Applied Surface Science - Volume 250, Issues 1â4, 31 August 2005, Pages 238-246
نویسندگان
Wang Deqing, Shi Ziyuan, Teng Yingli,