کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9566869 1503707 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Well-aligned ZnO nanowires grown on Si substrate via metal-organic chemical vapor deposition
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Well-aligned ZnO nanowires grown on Si substrate via metal-organic chemical vapor deposition
چکیده انگلیسی
ZnO nanowires were grown on silicon substrate by metal-organic chemical vapor deposition (MOCVD) without catalysts. The scanning electron microscopy (SEM) observations along with X-ray diffraction (XRD) results suggest that the ZnO nanowires are single crystals vertically well-aligned to silicon substrate. Room-temperature photoluminescence (PL) measurement reveals strong UV emission and weak green emission, which demonstrates that the nanowires are of good optical properties. The mechanism of the catalyst-free growth of ZnO nanowires on silicon substrate is proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 250, Issues 1–4, 31 August 2005, Pages 280-283
نویسندگان
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