Analytical and numerical calculations of the temperature distribution in Si and Ge targets irradiated by excimer lasers

A comparison of the temperature profile versus depth obtained for semi-infinite amorphous germanium and crystalline silicon materials when irradiated with an ArF excimer laser (193 nm, 20 ns) is presented. The melting depth for a given energy density is also evaluated by the different mathematical methods. The validity of these results and the reliability and advantages of the numerical methods is discussed.