کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9567102 | 1503710 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Pulsed laser deposition of thin films of various full Heusler alloys Co2MnX (XÂ =Â Si, Ga, Ge, Sn, SbSn) at moderate temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
This work presents pulsed laser deposition of cobalt-based Heusler thin films Co2MnX (XÂ =Â Si, Ga, Ge, Sn, SbSn) on different substrates (Si, GaAs, InAs). The deposition processes developed in vacuum (about 10â5Â Pa) to avoid oxidation of the films and targets. The temperature of the substrates during the depositions was kept below 500Â K to minimise interface interdiffusion. From X-ray diffraction, we found that the films are crystalline and slightly oriented. The stoichiometric composition of the films was further checked by EDS, while the size and density of droplets were determined by SEM. The magnetic properties of the films are consistent with those of the bulk material used as target.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 247, Issues 1â4, 15 July 2005, Pages 151-156
Journal: Applied Surface Science - Volume 247, Issues 1â4, 15 July 2005, Pages 151-156
نویسندگان
E. Valerio, C. Grigorescu, S.A. Manea, F. Guinneton, W.R. Branford, M. Autric,