کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9567139 | 1503710 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Laser-induced epitaxial recrystallization after alkali-ion implantion into α-quartz
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Laser-induced epitaxial recrystallization after alkali-ion implantion into α-quartz Laser-induced epitaxial recrystallization after alkali-ion implantion into α-quartz](/preview/png/9567139.png)
چکیده انگلیسی
Ion implantation and recrystallization of quartz may be a very important process for photonic applications. We have investigated how laser irradiation can be used to epitaxially recrystallize layers of α-quartz, which were amorphized by 175 keV Rb+ or 250 keV Cs+ ion implantation at a fluence of 2.5 Ã 1016 cmâ2. The samples were irradiated with pulses of a XeCl excimer laser (wavelength 308 nm, pulse length 55 ns, energy density 3.2-5 J/cm2). The thickness of the amorphous layer and the quality of the recrystallized layer were analyzed by Rutherford Backscattering Channeling Spectroscopy. Partial epitaxial recrystallization was found for all laser-irradiated samples that proceeded faster for higher laser energy density, however no full epitaxy was achieved up to the maximum laser energy of 5 J/cm2. The degree of epitaxy was more or less the same for 20 or 200 laser shots.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 247, Issues 1â4, 15 July 2005, Pages 396-400
Journal: Applied Surface Science - Volume 247, Issues 1â4, 15 July 2005, Pages 396-400
نویسندگان
S. GÄ
siorek, S. Dhar, K.P. Lieb, P. Schaaf,