کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9567148 | 1503710 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Etching of CuInSe2 thin films-comparison of femtosecond and picosecond laser ablation
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, the processing of the new absorber material for thin film solar cells, CuInSe2 (CIS), and the generation of trenches by femtosecond and picosecond laser etching is investigated. Threshold fluences and processing parameters for selective thin film ablation were ascertained. TEM, EDXS and Raman investigations were used to study the generation of defects in the CuInSe2 crystal lattice near to the surface due to laser processing. Femtosecond as well as picosecond laser ablation cause only little material modification of this compound semiconductor and allow high quality laser scribing for photovoltaic applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 247, Issues 1â4, 15 July 2005, Pages 447-452
Journal: Applied Surface Science - Volume 247, Issues 1â4, 15 July 2005, Pages 447-452
نویسندگان
David Ruthe, Klaus Zimmer, Thomas Höche,