کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9567268 | 1503711 | 2005 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis of GaN cleaning procedures
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Analysis of GaN cleaning procedures Analysis of GaN cleaning procedures](/preview/png/9567268.png)
چکیده انگلیسی
In this study, various surface cleaning techniques for the removal of contaminants from GaN were investigated. Auger electron spectroscopy (AES) analysis was used to monitor the presence of surface contaminants and atomic force microscopy (AFM) was used to monitor surface roughness. AES analysis showed that KOH was effective in removing carbon (C). Comparing the topographies of GaN surfaces cleaned in HCl, KOH and (NH4)2S in aqueous solutions; it has been found that surfaces cleaned in (NH4)2S is the best cleaned, have the lowest values of both C and O, RMS roughness and Ga/N ratio. The nearly complete removal of C and O were achieved by heating the samples in AES in vacuum.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 246, Issues 1â3, 15 June 2005, Pages 279-289
Journal: Applied Surface Science - Volume 246, Issues 1â3, 15 June 2005, Pages 279-289
نویسندگان
M. Diale, F.D. Auret, N.G. van der Berg, R.Q. Odendaal, W.D. Roos,