کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9567287 1503713 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Surface elemental segregation and the Stranski-Krastanow epitaxial islanding transition
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Surface elemental segregation and the Stranski-Krastanow epitaxial islanding transition
چکیده انگلیسی
It is shown that a new segregation-based mechanism underpins the Stranski-Krastanow (S-K) epitaxial islanding transition in both the InxGa1−xAs/GaAs and Si1−xGex/Si systems over wide ranges of growth conditions. Quantitative segregation calculations allow critical 'wetting' layer thicknesses to be derived and, for the InxGa1−xAs/GaAs system (x = 0.25-1), such calculations show good agreement with experimental measurements. The segregation-mediated driving force is considered to be important, also, for all other epitaxial systems which comprise chemically similar but substantially misfitting materials and which exhibit the S-K transition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 244, Issues 1–4, 15 May 2005, Pages 65-70
نویسندگان
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