Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0Â 0Â 0Â 1) substrates

This paper attempts to form AlGaN/GaN quantum wire (QWR) network structures on patterned GaN (0 0 0 1) substrates by selective molecular beam epitaxy (MBE) growth. Substrate patterns were prepared along 〈112¯0〉- and 〈11¯00〉-directions by electron cyclotron resonance assisted reactive-ion beam etching (ECR-RIBE) process. Selective growth was possible for both directions in the case of GaN growth, but only in the 〈112¯0〉-direction in the case of AlGaN growth. A hexagonal QWR network was successfully grown on a hexagonal mesa pattern by combining the 〈112¯0〉-direction and two other equivalent directions. AFM observation confirmed excellent surface morphology of the grown network. A clear cathodoluminescence (CL) peak coming from the embedded AlGaN/GaN QWR structure was clearly identified.