کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9567327 1503713 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of reacting nitrogen gas consistence on the properties of TiN films prepared by rf. magnetron sputtering
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Influence of reacting nitrogen gas consistence on the properties of TiN films prepared by rf. magnetron sputtering
چکیده انگلیسی
Structural and mechanical properties of the TiN films deposited on stainless-steel substrates by rf. magnetron sputtering have been studied. The TiN films of few hundreds of nanometers in thickness were fabricated, varying both the total pressure of the N2/Ar reactive gas mixture and N2 partial pressure in a chamber. It was found that the morphology of the TiN films strongly depended on the N2 concentration of the working gas. A formation of the (2 0 0) phase was detected at 50% of N2 concentration. The tribological properties of the deposited films strongly depended on the total pressure. A low frictional coefficient of 0.14 has been measured for TiN films deposited at 50% of N2, at a total pressure 9 Pa.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 244, Issues 1–4, 15 May 2005, Pages 244-247
نویسندگان
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