کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9567327 | 1503713 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of reacting nitrogen gas consistence on the properties of TiN films prepared by rf. magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Structural and mechanical properties of the TiN films deposited on stainless-steel substrates by rf. magnetron sputtering have been studied. The TiN films of few hundreds of nanometers in thickness were fabricated, varying both the total pressure of the N2/Ar reactive gas mixture and N2 partial pressure in a chamber. It was found that the morphology of the TiN films strongly depended on the N2 concentration of the working gas. A formation of the (2Â 0Â 0) phase was detected at 50% of N2 concentration. The tribological properties of the deposited films strongly depended on the total pressure. A low frictional coefficient of 0.14 has been measured for TiN films deposited at 50% of N2, at a total pressure 9Â Pa.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 244, Issues 1â4, 15 May 2005, Pages 244-247
Journal: Applied Surface Science - Volume 244, Issues 1â4, 15 May 2005, Pages 244-247
نویسندگان
Y. Pihosh, M. Goto, A. Kasahara, T. Oishi, M. Tosa,