کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9567486 | 1503717 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Epitaxy relationships between Ge-islands and SiC(0Â 0Â 0Â 1)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Reflection high-energy electron diffraction (RHEED) has been used to determine epitaxy relationships and in-plane orientations between Ge and SiC(0 0 0 1). Three monolayers of Ge have been deposited at 500 °C on a graphitized SiC (6â3 à 6â3)R30° reconstructed surface, this surface supporting epitaxial Ge island growth in a Volmer-Weber mode. Nucleation of relaxed Ge-islands gives rise to transmission electron diffraction patterns allowing to deduce that pure Ge grows according to only one epitaxy relationship Ge{1 1 1}//SiC(0 0 0 1). These {1 1 1}-Ge-islands have two in-plane orientations, a preferential one, Geã-1-12ã//SiCã1-100ã and a minority one, Geã-1-12ã//SiCã10-10ã, deduced one from the other by a 30° rotation around the ã1 1 1ã-Ge (or [0 0 0 1]-SiC) growth axis. Due to the three-fold symmetry of the {1 1 1}-Ge plane, each in-plane orientation is degenerated into two twin orientations, differing by a 180° angle around Geã111ã.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 241, Issues 3â4, 15 March 2005, Pages 403-411
Journal: Applied Surface Science - Volume 241, Issues 3â4, 15 March 2005, Pages 403-411
نویسندگان
K. Aït-Mansour, D. Dentel, L. Kubler, M. Diani, J.L. Bischoff, D. Bolmont,