کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9567524 1503718 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electron irradiation effect on depth profiling of a SiO2/Si(1 0 0) surface by Auger electron spectroscopy
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Electron irradiation effect on depth profiling of a SiO2/Si(1 0 0) surface by Auger electron spectroscopy
چکیده انگلیسی
Electron irradiation effect on depth profiling of a SiO2/Si(1 0 0) surface has been studied. A theoretical model for electron stimulated desorption (ESD) and gas adsorption on the solid surface has been proposed. The ESD process on the solid surface has been evaluated by Auger electron spectroscopy (AES) combined with a depth profiling technique. Our model can explain the observed ESD effect in low electron current densities less than 30 A/m2. In higher current densities, the deviation from the model appears because dynamic diffusion process becomes dominant. Furthermore the dependencies of the ion sputtering rate and the depth resolution on the current density of the electron radiation have been observed quantitatively, whose origin has been discussed based on a model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 241, Issues 1–2, 28 February 2005, Pages 127-130
نویسندگان
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