کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9567524 | 1503718 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electron irradiation effect on depth profiling of a SiO2/Si(1Â 0Â 0) surface by Auger electron spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Electron irradiation effect on depth profiling of a SiO2/Si(1Â 0Â 0) surface has been studied. A theoretical model for electron stimulated desorption (ESD) and gas adsorption on the solid surface has been proposed. The ESD process on the solid surface has been evaluated by Auger electron spectroscopy (AES) combined with a depth profiling technique. Our model can explain the observed ESD effect in low electron current densities less than 30Â A/m2. In higher current densities, the deviation from the model appears because dynamic diffusion process becomes dominant. Furthermore the dependencies of the ion sputtering rate and the depth resolution on the current density of the electron radiation have been observed quantitatively, whose origin has been discussed based on a model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 241, Issues 1â2, 28 February 2005, Pages 127-130
Journal: Applied Surface Science - Volume 241, Issues 1â2, 28 February 2005, Pages 127-130
نویسندگان
T. Yakabe, D. Fujita, K. Yoshihara,