کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9567552 | 1503718 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of isotope controlled SiC thin film by plasma chemical vapor deposition and its characterization
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Formation of isotope controlled SiC thin film by plasma chemical vapor deposition and its characterization Formation of isotope controlled SiC thin film by plasma chemical vapor deposition and its characterization](/preview/png/9567552.png)
چکیده انگلیسی
Formation of isotope controlled SiC thin film by plasma chemical vapor deposition has been examined with SiF4 and CH4 and characterization of film was performed. From scanning electron microscope observation, the surface of film showed fine granular morphology and the cross section view of film showed a pillar-shaped structure. The X-ray diffraction measurement showed that thin film consisted of polycrystalline 3C-SiC. The crystallinity and crystalline diameter of microcrystalline thin film increased with substrate temperature and reached maximum value at 1023Â K. At higher temperature, crystallinity and crystalline diameter decreased.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 241, Issues 1â2, 28 February 2005, Pages 266-269
Journal: Applied Surface Science - Volume 241, Issues 1â2, 28 February 2005, Pages 266-269
نویسندگان
H. Suzuki, H. Araki, W. Yang, T. Noda,