Formation of isotope controlled SiC thin film by plasma chemical vapor deposition and its characterization

Formation of isotope controlled SiC thin film by plasma chemical vapor deposition has been examined with SiF4 and CH4 and characterization of film was performed. From scanning electron microscope observation, the surface of film showed fine granular morphology and the cross section view of film showed a pillar-shaped structure. The X-ray diffraction measurement showed that thin film consisted of polycrystalline 3C-SiC. The crystallinity and crystalline diameter of microcrystalline thin film increased with substrate temperature and reached maximum value at 1023 K. At higher temperature, crystallinity and crystalline diameter decreased.