کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9567628 | 1503719 | 2005 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Deposition and characterization of carbon nitride films from hexamethylenetetramine/N2 by microwave plasma-enhanced chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Carbon nitride thin films were deposited on Si(1 0 0) substrate by microwave plasma-enhanced chemical vapor deposition (PECVD). Hexamethylenetetramine (HMTA) was used as carbon and nitrogen source while N2 gas was used as both nitrogen source and carrier gas. The sp3-bonded Cî¸N structure in HMTA was considered significantly in the precursor selection. X-ray diffraction analysis indicated that the film was a mixture of crystalline α- and β-C3N4 as well as graphitic-C3N4 and β-Si3N4 which were not easily distinguished. Raman spectroscopy also suggested the existence of α- and β-C3N4 in the films. X-ray photoelectron spectroscopy study indicated the presence of sp2- and sp3-bonded Cî¸N structures in the films while sp3Cî¸N bonding structure predominated to the sp2 Cî¸N bonding structure in the bulk composition of the films. N was also found to be bound to Si atoms in the films. The product was, therefore, described as CNx:Si, where x depends on the film depth, with some evidences of crystalline C3N4 formation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 240, Issues 1â4, 15 February 2005, Pages 120-130
Journal: Applied Surface Science - Volume 240, Issues 1â4, 15 February 2005, Pages 120-130
نویسندگان
Md.Nizam Uddin, Osama A. Fouad, Masaaki Yamazato, Masamitsu Nagano,