کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9567667 | 1503719 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interband Stark effects in InxGa1âxAs/InyAl1âyAs coupled step quantum wells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
The effects of an electric field on the interband transitions in InxGa1âxAs/InyAl1âyAs coupled step quantum wells have been investigated both experimentally and theoretically. A InxGa1âxAs/InyAl1âyAs coupled step quantum well sample consisted of the two sets of a 50Â Ã
In0.53Ga0.47As shallow quantum well and a 50Â Ã
In0.65Ga0.35As deep step quantum well bounded by two thick In0.52Al0.48As barriers separated by a 30Â Ã
In0.52Al0.48As embedded potential barrier. The Stark shift of the interband transition energy in the InxGa1âxAs/InyAl1âyAs coupled step quantum well is larger than that of the single quantum well, and the oscillator strength in the InxGa1âxAs/InyAl1âyAs coupled step quantum well is larger than that in a coupled rectangular quantum well. These results indicate that InxGa1âxAs/InyAl1âyAs coupled step quantum wells hold promise for potential applications in optoelectron devices, such as tunable lasers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 240, Issues 1â4, 15 February 2005, Pages 452-455
Journal: Applied Surface Science - Volume 240, Issues 1â4, 15 February 2005, Pages 452-455
نویسندگان
J.H. Kim, T.W. Kim, K.H. Yoo,