کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9572120 | 1388504 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
New physical techniques for IC functional analysis of on-chip devices and interconnects
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: New physical techniques for IC functional analysis of on-chip devices and interconnects New physical techniques for IC functional analysis of on-chip devices and interconnects](/preview/png/9572120.png)
چکیده انگلیسی
Localization of functional fails in ICs makes use of physical interactions that the devices produce under electrical operation. The focus is on electroluminescence (keyword: photon emission) and signal responses to stimulation by scanned beams of laser light or particles. In modern chip technologies access of this information is only available through chip backside. This paradigm shift requires a full revision of chip analysis techniques and processes. This has also been a kick-off of a rush in development of new methodologies. Here, an overview is given which parameters are crucial for successful analysis techniques of the future and how photon emission, laser based techniques and new preparation techniques based on focused ion beam (FIB) open the path into this direction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 1, 30 September 2005, Pages 18-23
Journal: Applied Surface Science - Volume 252, Issue 1, 30 September 2005, Pages 18-23
نویسندگان
Christian Boit,