کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9572162 1388504 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electronic properties of the organic semiconductor hetero-interface CuPc/C60
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Electronic properties of the organic semiconductor hetero-interface CuPc/C60
چکیده انگلیسی
We present a study of the electronic properties of the interface between the well-established molecular organic semiconductor copper phthalocyanine (CuPc) and the fullerite C60 using photoelectron spectroscopy and the Kelvin-probe (KP) method. Upon deposition of CuPc on C60, we found interfacial shifts of the vacuum level indicating the formation of a dipole layer, while band bending is found to be negligible. The interface dipole of 0.5 eV measured with KP is close to the difference between the work functions of bulk CuPc and C60. No evidence for a chemical interaction at the interface is concluded from the absence of additional features in the core-level spectra at the earliest stages of deposition. The energy-level alignment diagram at the CuPc/C60 interface is derived.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 1, 30 September 2005, Pages 143-147
نویسندگان
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