کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9572481 | 1503715 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Defect-related photoluminescence of silicon nanoparticles produced by pulsed ion-beam ablation in vacuum
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Defect-related photoluminescence of silicon nanoparticles produced by pulsed ion-beam ablation in vacuum Defect-related photoluminescence of silicon nanoparticles produced by pulsed ion-beam ablation in vacuum](/preview/png/9572481.png)
چکیده انگلیسی
Visible light emission has been observed from Si nanoparticles produced using an intense pulsed ion-beam evaporation (IBE) technique in vacuum. The as-prepared Si nanoparticles possess good crystallinity without any post-annealing. Room-temperature photoluminescence (PL) spectra for the Si nanoparticles were registered in blue-green range. The average crystal size (around 20Â nm) estimated from glancing angle X-ray diffraction (GAXRD) was relatively large, inconsistent with quantum size effect for the light emission. The Si nanoparticles was exposed to O2 gas at elevated temperature and hydrofluoric acid (HF) vapor at room temperature for examining the PL source, where significant deterioration of PL intensity was found subsequently. Combined with analyses of X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectroscopy (EDX), the PL is attributable to oxide defects of the samples.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 242, Issues 3â4, 15 April 2005, Pages 256-260
Journal: Applied Surface Science - Volume 242, Issues 3â4, 15 April 2005, Pages 256-260
نویسندگان
X.P. Zhu, Tomiyuki Yukawa, Makoto Hirai, Tsuneo Suzuki, Hisayuki Suematsu, Weihua Jiang, Kiyoshi Yatsui,