کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9594470 | 1507963 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth, stability and morphology evolution of Pb films on Si(1Â 1Â 1) prepared at low temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Room temperature morphology evolution of Pb thin films, prepared on the Si(1Â 1Â 1)-7Â ÃÂ 7 substrate at a low temperature (145Â K), is investigated by reflection high energy electron diffraction, scanning tunnelling microscopy and angle-resolved photoemission spectroscopy. A critical thickness of 10 monolayers (ML) is identified, below which all the flat films formed at low temperature are unstable against evolution into interconnected islands at room temperature. From 10Â ML to 21Â ML, Pb films become stable at room temperature and grow via a bi-layer mode. Above 21Â ML, the film growth turns into a layer-by-layer mode. A “beating effect” is observed to modulate this special growth mode, which changes the film stability from even (odd) layers to odd (even) layers with a 9Â ML period. Morphology and electronic structure analysis show that the quantum size effect is responsible for the different morphology evolution behaviour and the magic stability of Pb films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 596, Issues 1â3, 10 December 2005, Pages L331-L338
Journal: Surface Science - Volume 596, Issues 1â3, 10 December 2005, Pages L331-L338
نویسندگان
Yan-Feng Zhang, Jin-Feng Jia, Zhe Tang, Tie-Zhu Han, Xu-Cun Ma, Qi-Kun Xue,