کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9594615 1507971 2005 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The room temperature growth of Ti on sputter-cleaned Si(1 0 0): Composition and nanostructure of the interface
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
The room temperature growth of Ti on sputter-cleaned Si(1 0 0): Composition and nanostructure of the interface
چکیده انگلیسی
The formation of the interface during the deposition of titanium on sputter-cleaned Si(1 0 0) substrates has been studied at room temperature using X-ray photoelectron spectroscopy (XPS), angle resolved XPS (ARXPS), ultraviolet photoelectron spectroscopy (UPS) and ion scattering spectroscopy (ISS). The experimental results are consistent with a two-stage mechanism for Ti growth: a first stage characterized by the formation of a uniform layer ∼4 monolayer (ML) thick of TiSix (x ≈ 0.78), followed by a second stage in which metallic Ti grows over the titanium silicide formed previously. During the second stage, metallic Ti grows according to a Stranski-Krastanov mechanism, with the formation of a Ti monolayer followed by the growth of metallic titanium islands with an average thickness of 7 ML. The formation of a titanium silicide during the first stage of growth, involves charge transfer from Ti to Si.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 588, Issues 1–3, 20 August 2005, Pages 92-100
نویسندگان
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