کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9594696 1507985 2005 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth and annealing of GaInAsN: density-functional calculations on the reactions of surface and bulk structures
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Growth and annealing of GaInAsN: density-functional calculations on the reactions of surface and bulk structures
چکیده انگلیسی
The annealing behaviour of bulk structures formed by deposition is investigated using energetic data calculated by the density-functional supercell method. Ga4−mInmN centres are the most stable arrangements in the bulk. During the annealing process nitrogen atoms move from the Ga4N centres to isolated indium atoms or pairs of indium atoms by N/As exchange. This is supported by the calculated blueshift of the band-gap during the exchange process, which agrees well with the experimental observed blueshift.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 574, Issues 2–3, 10 January 2005, Pages 144-152
نویسندگان
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