کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9594896 | 1507960 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A scanning photoelectron microscopy study of AlN/SixNy insulating stripes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Scanning photoelectron microscopy (SPEM) has been applied to measure a series of Al 2p images from a 900 nm thick AlN insulating overlayer covering a SixNy mesh on the Si substrate. The Al 2p core level exhibits an energy shift that is induced by the local charging. This energy shift depends on the thickness of the AlN/SixNy stripe, which is determined to be â¼0.12 eV/nm. The Al 2p SPEM images from the AlN/SixNy stripes change with different kinetic energies of the photoelectrons. The line width of the AlN/SixNy stripe varies from 4.5 to 11 μm. A “spatial-charging” model is proposed to explain those changes in the images. The present study shows that small local variations in insulating thickness can be monitored by the SPEM non-destructive technique.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 599, Issues 1â3, 30 December 2005, Pages 107-112
Journal: Surface Science - Volume 599, Issues 1â3, 30 December 2005, Pages 107-112
نویسندگان
Chien-Hsun Chen, Shih-Chieh Wang, Chung-Ming Yeh, Jennchang Hwang, Ruth Klauser,