کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9594919 | 1395915 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Adsorption of Pb on NiAl(1Â 1Â 0): energetics and structure
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کلمات کلیدی
Alloys - آلیاژهاGrowth - رشدSurface structure, morphology, roughness, and topography - ساختار سطح، مورفولوژی، زبری و توپوگرافیLead - سربAdsorption kinetics - سینتیک جذبAuger electron spectroscopy - طیف سنج الکترونی آگرLow energy electron diffraction (LEED) - پراش الکترونی پایین (LEED)Sticking - چسبیده
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
The adsorption of Pb onto a NiAl(1 1 0) single crystal surface at 300 K has been studied by Auger electron spectroscopy (AES), Low energy electron diffraction (LEED), molecular beam/surface scattering and single crystal adsorption calorimetry (SCAC). AES indicates a Stranski-Krastanov growth mode, i.e., Pb initially grows on NiAl(1 1 0) two-dimensionally until the first layer completes at 0.89 ML, where a 1330 superstructure is observed by LEED, followed by 3D islanding. Measurements of the Pb gas that does not stick indicate that Pb sticks on NiAl(1 1 0) with an initial probability of 0.99. The initial heat of adsorption of Pb on NiAl(1 1 0) is 249 ± 10 kJ/mol. Due to the repulsive interactions between Pb adatoms, the heat of adsorption decreases within the first layer to a value identical to the heat of sublimation of bulk Pb (195 kJ/mol), where it remains at higher coverages. This first application of adsorption calorimetry on such a thick sample (75 μm versus 0.2-8 μm previously) demonstrates that adsorption calorimetry can be extended to a wider range of surfaces, since this thickness can be achieved with nearly any single crystal material by simple mechanical thinning.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 574, Issue 1, 1 January 2005, Pages 34-42
Journal: Surface Science - Volume 574, Issue 1, 1 January 2005, Pages 34-42
نویسندگان
J.F. Zhu, S.F. Diaz, L.R. Heeb, Charles T. Campbell,