Modified Si(1 0 0)4 × 3-In nanocluster arrays

Possibility for the self-organized formation of the nanostructure arrays based on the modification of the Si(1 0 0)4 × 3-In surface has been demonstrated. The forming arrays include ordinary non-doped 4 × 3-In array, doped 4 × 3-In array and wavy-chain array. Each of the arrays is characterized by the individual surface properties which control the number density and shape of the islands grown at these surfaces at room temperature.