کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9595110 | 1507966 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Direct and indirect processes in photon-stimulated ion desorption from condensed formamide
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کلمات کلیدی
NEXAFSSecondary electron emission - انتشار الکترونی ثانویهDesorption induced by electron stimulation - تخلیه ناشی از تحریک الکتریکیDesorption induced by electronic transition (DIET) - جذب ناشی از انتقال الکترونیکی (رژیم غذایی)Formamide - فرمامیدPhoton stimulated desorption (PSD) - فوتون تحریک جذب (PSD)
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Direct and indirect processes in photon-stimulated ion desorption from condensed formamide Direct and indirect processes in photon-stimulated ion desorption from condensed formamide](/preview/png/9595110.png)
چکیده انگلیسی
A preliminary investigation of photon-stimulated ion desorption (PSID) from condensed deuterated formamide (HCOND2) by using polarization-angle-dependent near-edge X-ray absorption fine structure (NEXAFS) spectroscopy combined with velocity-selected time-of-flight (TOF) mass spectrometry, is presented. It was found that the PSID yield of total D+ ion is enhanced by the N 1s â Ï*(ND) transition at both grazing and normal photon incidence angles and its enhanced yield shows no polarization dependence despite of direct PSID, which indicates the ND bonds are not aligned with the surface-oriented CNO molecular plane of HCOND2. It was also found that the fastest velocity components of H+ and D+ ions monotonically decrease as the energy at the normal incidence angle. This finding suggests that X-ray-induced electron stimulated desorption (XESD) via secondary electrons resulting from valence photoelectrons; indirect PSID is a dominant process in the fastest components.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 593, Issues 1â3, 20 November 2005, Pages 303-309
Journal: Surface Science - Volume 593, Issues 1â3, 20 November 2005, Pages 303-309
نویسندگان
H. Ikeura-Sekiguchi, T. Sekiguchi, Y. Baba, M. Imamura, N. Matsubayashi, H. Shimada,