کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9595132 | 1507983 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Valence band and In-4d core level photoemission study of de-capped and ion-bombarded-annealed InAs(0Â 0Â 1) epitaxial surfaces
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
The (4Â ÃÂ 2) epitaxial InAs(0Â 0Â 1) surface grown by molecular beam epitaxy and subjected to different surface treatments, namely amorphous As-de-capping and ion-bombardment annealing (IBA), is investigated by high-resolution angular-resolved UV photoelectron spectroscopy. Both treatments produce a semiconducting surface, ruling out the presence of metallic In aggregates. Binding energy shifts of 0.2-0.3Â eV are measured for the valence-band levels of the IBA surface with respect to the de-capped surface, implying an important influence of the surface treatment on the subsurface region. The line-shape of the In-4d core levels, which consists of two different In-related surface doublets, is discussed in view of the recently proposed structural models based on dimers formation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 576, Issues 1â3, 10 February 2005, Pages 123-130
Journal: Surface Science - Volume 576, Issues 1â3, 10 February 2005, Pages 123-130
نویسندگان
I. Aureli, V. Corradini, C. Mariani, E. Placidi, F. Arciprete, A. Balzarotti,