Keywords: APO; apolipoprotein; As; arsenic; BMI; body mass index; BP; blood pressure; Cd; cadmium; CVD; cardiovascular disease; InAs; inorganic-As; LDLc; low-density lipoprotein; LRM; Linear regression model; MD; Mediterranean diet; HDLc; high-density lipoprotein;
مقالات ISI (ترجمه نشده)
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Keywords: Optical properties; Dielectric constants; Refractive index; Optical phonons; InAs;
Keywords: Ag; silver; Ag2S; silver Sulfide; AIST; Japanese National Institute of Advanced Industrial Science and Technology; AM; air mass; a-Si; amorphous silicon; Au; gold; AZO; Al-doped ZnO; Bi2S3; bismuth(III) sulfide; CB; conduction band; CBD; chemical bath dep
Study on the specific contact resistance of evaporated or electroplated golden contacts to n- and p- type InAs epitaxial layers grown by MBE
Keywords: InAs; Specific contact resistance; Low resistance contacts; Electroplating; CTLM; MBE;
High-energy terahertz surface optical rectification
Keywords: THz; Terahertz; OR; Optical Rectification; InAs; Indium Arsenide; InSb; Indium Antimonide; OPTP; Optical Pump Terahertz Probe; OPRE; Optical Pump Rectification Emission; SP; Screening Pump; TP; Terahertz Pump; Terahertz dynamics; Quasi-2D nonlinear optics
Temperature dependence of phonons and related crystal properties in InAs, InP and InSb zinc-blende binary compounds
Keywords: Thermal properties; Phonons; Dielectric constant; InAs; InSb and InP semiconductors;
Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing
Keywords: Elemental diffusion; Surface morphology; High-k dielectrics; InAs; Thermal stability;
Electrical and optical properties of core-shell InAs-InAsyP1-y nanowires
Keywords: InAs; III-V semiconductor; Nanowires; Passivation; Core-shell structure; MOCVD;
GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications
Keywords: InAs; GaAsSb; InGaAs; Quantum dot; Solar cells;
Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications
Keywords: Atomic layer deposition; Composite channel; Drain-current enhancement; High-K; InAs; InGaAs MOSFETs; InP; Leakage;
Full length articleUniaxial strain induced optical properties of complex type-II InGaAs/InAs/GaAsSb nano-scale heterostructure
Keywords: Uniaxial strain; Optical gain; InAs; InGaAs; GaAsSb; k.p method;
The size-dependent electronic and optical properties of InAs quantum dots
Keywords: Spherical quantum dots; Energy levels; Refractive index; Dielectric constant; InAs
Electronic structure of reconstructed InAs(001) surfaces - identification of bulk and surface bands based on their symmetries
Keywords: Angle-resolved photoelectron spectroscopy (ARPES); InAs; Electronic band structure; Surface states;
Ballistic modeling of InAs nanowire transistors
Keywords: Nanowire; MOSFET; InAs; Ballistic; Modeling
Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots
Keywords: Quantum dots; InAs; Antimony; Diluted nitrides; TEM; Solar cell
Study on the impact of device parameter variations on performance of III-V homojunction and heterojunction tunnel FETs
Keywords: Homojunction tunnel FETs; Heterojunction tunnel FETs; Reliability; Monte Carlo simulations; Parameter variations; InAs; GaAsSb
Calculation of InAsBi ternary phase diagram
Keywords: Phase diagram; InAs; InBi; InAsBi
Low bandgap mid-infrared thermophotovoltaic arrays based on InAs
Keywords: Thermo-photovoltaic; Mid-infrared; Low bandgap; InAs; Waste heat recovery;
III-V nanowires for logics and beyond
Keywords: III-V MOSFETs; Nanowires; InGaAs; InAs;
Catalyst-free heteroepitaxial growth of very long InAs nanowires on Si
Keywords: MOCVD; InAs; Nanowires; Transmission line measurement; Contact resistance
Synthesis of colloidal InAs/ZnSe quantum dots and their quantum dot sensitized solar cell (QDSSC) application
Keywords: InAs; InAs/ZnSe core/shell; Wettability; Quantum dot based solar cell
Self-assembled monolayers of alkyl-thiols on InAs: A Kelvin probe force microscopy study
Keywords: Self-assembled monolayers; Thiols; InAs; Surface analysis; Kelvin probe force microscopy;
Surface states and charge accumulation states on reconstructed InAs(001) surfaces
Keywords: InAs; ARPES; Charge accumulation states; Surface electronic structure;
Influence of lattice expansion on the topological band order of InAsxSb1âx (x = 0, 0.25, 0.5, 0.75, 1) alloys
Keywords: InAs; InSb; Narrow band gap semiconductors; FP-LAPW; Density functional theory; Lattice expansion;
A review of InP/InAlAs/InGaAs based transistors for high frequency applications
Keywords: Bipolar transistors; Composite channel; HEMT; Hetero junction bipolar transistors (HBTs); InAs; InGaAs; InP; Noise figure (NF)
Influence of InAs quantum dots on the transport properties of GaAs-based solar cell devices
Keywords: Quantum dots; InAs; Solar cell; Trap states
Evolution of Raman spectra in n-InAs wafer with annealing temperature
Keywords: 68.47.Fg; 78.30.Fs; 68.35.Ja; Surface charge accumulation layer; InAs; Annealing; Raman;
Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots
Keywords: Quantum dot; InAs; GaAs; GaAsSb; Reflectance anisotropy spectroscopy;
Use of 3-aminopropyltriethoxysilane deposited from aqueous solution for surface modification of III-V materials
Keywords: III/V materials; Aminopropylsilane; Surface passivation; NEXAFS; XPS; InAs; GaSb;
Solution-based synthesis of III–V quantum dots and their applications in gas sensing and bio-imaging
Keywords: III–V quantum dots; Solution-phase synthesis; GaN; GaP; GaAs; InN; InP; InAs; Gas sensing; Bio-imaging
TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface
Keywords: 68.37.Lp; 81.07.Ta; 81.15.Lm; 81.15.Gh; 81.16.Dn; Low dimensional structures; Transmission electron microscopy; Liquid phase epitaxy; Antimonides; InAs;
Synchrotron radiation photoemission study of the thermal annealing and atomic hydrogen cleaning of native oxide covered InAs(1Â 0Â 0) surfaces
Keywords: InAs; Core level photoemission; Surface cleaning;
Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs
Keywords: Quantum dots; Electroluminescence; Metalorganic vapor phase epitaxy; InAs; GaAsSb; Light emitting diodes;
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs
Keywords: Tunnel FET; Nanowire; Strain; InAs; NEGF
OMVPE of InAs quantum dots on an InGaP surface
Keywords: InAs; Quantum dots; Epitaxy
Effect of vicinal substrates on the growth and device performance of quantum dot solar cells
Keywords: Quantum dot solar cell; InAs; Substrate misorientation; Epitaxy
Growth conditions effects on optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs (1Â 1Â 3)A substrate
Keywords: InAs; GaAs (1Â 1Â 3); Quantum dot; MBE; Photoluminescence;
Local interaction imaging by SiGe quantum dot probe
Keywords: FM nc-AFM; Contact potential difference; Quantum dot; High aspect ratio; InAs;
Room temperature inductively coupled plasma etching of InAs/InSb in BCl3/Cl2/Ar
Keywords: Inductive coupled plasma; Etching; III-V semiconductor; InAs; InSb; Microfabrication;
57Fe Mössbauer studies on 57Mn∗ implanted InP and InAs
Keywords: InAs; InP; 57Mn implantation; Mössbauer spectroscopy; Fe sites
Predicted electronic and structural properties of BxIn1âxAs
Keywords: BAs; InAs; Boron alloy; Tight binding; Bowing; Elastic constants;
Relationship between phase and generation mechanisms of THz waves in InAs
Keywords: Terahertz; InAs; Phase shift; Diffusion; Photo-Dember effect
Luminescence properties of InAs quantum dots formed by a modified self-assembled method
Keywords: InAs; Quantum dot; Photoluminescence; Time-resolved photoluminescence;
High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy
Keywords: Metalorganic vapor phase epitaxy; InAs; High resolution X-ray diffraction81.05.Ea; 81.15.Gh; 61.05.Cp
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance–voltage method
Keywords: III/V; Nanowire doping; Capacitance–voltage; InAs; Vertical wrap gate
Temperature and annealing effects on InAs nanowire MOSFETs
Keywords: InAs; Nanowire; FET; High-k; HfO2; MOSFET; III–V semiconductor; Annealing
Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimony
Keywords: InAs; Surface quantum dot; Antimony; Surfactant; Segregation;
InAs/GaSb superlattice based long-wavelength infrared detectors: Growth, processing, and characterization
Keywords: Infrared detector; InAs; GaSb; Antimonide; Superlattice
Antimonide superlattice complementary barrier infrared detector (CBIRD)
Keywords: Infrared detector; InAs; GaSb; Antimonide; Unipolar barrier; Superlattice
Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells
Keywords: InAs; High-Electron-Mobility Transistors (HEMTs); Two-Dimensional Electron Gas (2DEG); Photoreflectance; Self-consistent Poisson-Schrödinger; Photoluminescence;