Study on the impact of device parameter variations on performance of III-V homojunction and heterojunction tunnel FETs

• Impact of physical parameter variations on the electrical features of III-V TFETs.
• InAs homojunction TFET and InAs-GaAs0.1Sb0.9 heterojunction TFET.
• ON-current, OFF-current, and threshold voltage as operation parameters.
• TFETs are considerably sensitive to the doping of the source and gate work function.
• Heterojunction TFETs are less sensitive compared to the homojunction TFETs.

In this paper, the impact of physical parameter variations on the electrical characteristics of III-V TFETs is investigated. The study is performed on the operations of two optimized ultra-thin 20 nm double-gate transistors. The two device structures are InAs homojunction TFET and InAs-GaAs0.1Sb0.9 heterojunction TFET. The operation parameters are the ON-current, OFF-current, and threshold voltage. The investigation is performed at the device level, using a device simulator and the Monte-Carlo simulation approach is exploited to extract the distribution of electrical parameters in the presence of the process variation. The results reveal that the operation of the transistor is more sensitive to the doping of the source and gate work function compared to other physical parameters. Furthermore, the heterojunction TFETs show less sensitivity to physical parameter variations compared to the homojunction ones.