کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
752596 895445 2016 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ballistic modeling of InAs nanowire transistors
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Ballistic modeling of InAs nanowire transistors
چکیده انگلیسی


• The intrinsic performance of ballistic InAs nanowire transistors is evaluated.
• The transport properties within nanowires of different diameters are mapped.
• The influence from non-parabolic bands and self-consistency is quantified.
• Scaling of the transistor structure is investigated.

In this work, the intrinsic performance of InAs nanowire transistors is evaluated in the ballistic limit. A self-consistent Schrödinger–Poisson solver is utilized in the cylindrical geometry, while accounting for conduction band non-parabolicity. The transistor characteristics are derived from simulations of ballistic transport within the nanowire. Using this approach, the performance is calculated for a continuous range of nanowire diameters and the transport properties are mapped. A transconductance exceeding 4S/mm is predicted at a gate overdrive of 0.5V and it is shown that the performance is improved with scaling.Furthermore, the influence from including self-consistency and non-parabolicity in the band structure simulations is quantified. It is demonstrated that the effective mass approximation underestimates the transistor performance due to the highly non-parabolic conduction band in InAs. Neglecting self-consistency severely overestimates the device performance, especially for thick nanowires. The error introduced by both of these approximations gets increasingly worse under high bias conditions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 115, Part A, January 2016, Pages 47–53
نویسندگان
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