Room temperature inductively coupled plasma etching of InAs/InSb in BCl3/Cl2/Ar

► A parametric study for ICP etching of InAs and InSb in BCl3/Cl2/Ar plasma is reported. ► They have similar results with respect to the change of gas composition, pressure, ICP and RF power. ► An optimized room temperature etching process has been developed. ► Moderate anisotropic etching rate with ultra-smooth surfaces is achieved.