کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9595579 1507979 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigation of phosphorus surface segregation by X-ray scattering measurements
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Investigation of phosphorus surface segregation by X-ray scattering measurements
چکیده انگلیسی
The surface segregation of phosphorus in silicon at low temperatures is studied by using δ doping structures grown by molecular beam epitaxy. The samples are characterized by X-ray crystal truncation rod (CTR) scattering using synchrotron radiation as the light source. The 1/e decay length of P segregation and segregation barrier energy are obtained by fitting the CTR curves within kinematical approximation of X-ray diffraction theory. The surface segregation of P is strong at a growth temperature of 450 °C, with a 1/e decay length of 14 nm, while for growth temperatures below 350 °C, P segregation is negligible with a 1/e decay length not larger than 4 nm. The segregation barrier energy is determined to be 0.43 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 580, Issues 1–3, 10 April 2005, Pages 51-56
نویسندگان
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