کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9595700 | 1507981 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of epitaxial erbium-silicide islands on Si(0Â 0Â 1)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Formation of epitaxial erbium-silicide islands on Si(0Â 0Â 1) Formation of epitaxial erbium-silicide islands on Si(0Â 0Â 1)](/preview/png/9595700.png)
چکیده انگلیسی
Erbium films of 0.5, 2 and 6 nm thickness were evaporated in UHV onto Si(0 0 1) substrates, annealed and characterized in situ by reflected high-energy-electron diffraction (RHEED). The RHEED pattern was streaky for ErSi2âx films at all thicknesses were formed at 400 °C. A heat treatment of the 0.5 and 2 nm thick Er films at 800 °C induced an inhomogeneous surface showing RHEED patterns both of the Si(0 0 1) substrate and the epitaxial ErSi2âx. The same effect was observed after successive repetition of Er depositions, 12 times for the 0.5 nm and three times for the 2 nm thick Er films. In contrast for a 6 nm Er layer the RHEED pattern remained unchanged after the heat treatment at 800 °C. Atomic force microscopy (AFM) indicated the formation of a quasi-continuous layer with roughness independent of the Er film thickness. Cross-sectional transmission electron microscopy (XTEM) showed structures with a “hut like” form. This “continuous-discontinuous” like transformation of the epitaxial ErSi2âx film cannot be explained by only the well known strain effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 578, Issues 1â3, 10 March 2005, Pages 142-148
Journal: Surface Science - Volume 578, Issues 1â3, 10 March 2005, Pages 142-148
نویسندگان
G. PetÅ, G. Molnár, Z.E. Horváth, Cs.S. Daróczi, Ã. Zsoldos, J. Gyulai,