کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9671880 | 1450490 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Design of InAs/Ga(In)Sb superlattices for infrared sensing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
New infrared detector materials with high sensitivity, multi-spectral capability, improved uniformity and lower manufacturing costs are required for numerous infrared sensing applications. One material system has shown great theoretical and experimental promise for these applications: InAs/InxGa1âxSb type-II superlattices. These superlattices offer a large design space for adjusting not only the energy band gap of the material but also the band structure. The infrared properties of several sets of designs of InAs/GaSb superlattices were studied. These designs covered the mid-infrared spectral band from 3 to 6 μm. Optimization design rules were explored. The infrared photoresponse spectra, combined with 8Ã8 k·p envelope function approximation modeling of superlattice band gaps and absorption spectra, provide insight into the underlying physics behind the optimized design of these materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 36, Issues 3â6, MarchâJune 2005, Pages 256-259
Journal: Microelectronics Journal - Volume 36, Issues 3â6, MarchâJune 2005, Pages 256-259
نویسندگان
G.J. Brown, F. Szmulowicz, H. Haugan, K. Mahalingam, S. Houston,