کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9671881 | 1450490 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study and development of a silicon infrared diode operating under forward bias
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
This work presents an advance in optoelectronic silicon-based devices, since a theoretical and experimental study by the authors of an inexpensive transformation process by which a commercially available silicon p-n junction has been made to emit infrared light. The authors introduce a 'nano-layer' degradation to aid in the recombination processes necessary to obtain a silicon light emitting process. Silicon diodes are known as a very weak light emitter or even no-light emitting devices. Several techniques have been used to force silicon to emit light, the results was light emission in all colors, varying from visible to infrared. But the efficiency of the device remains very low compared to the costs of fabrication. In our paper, the intensity of the emitted light is an increasing function of the injected current, instead of the attenuation reported by others.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 36, Issues 3â6, MarchâJune 2005, Pages 260-263
Journal: Microelectronics Journal - Volume 36, Issues 3â6, MarchâJune 2005, Pages 260-263
نویسندگان
M. El Tahchi, E. Nassar, P. Mialhe,