کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9671893 1450490 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Origin of Coulomb blockade oscillations in single-electron transistors fabricated with granulated Cr/Cr2O3 resistive microstrips
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Origin of Coulomb blockade oscillations in single-electron transistors fabricated with granulated Cr/Cr2O3 resistive microstrips
چکیده انگلیسی
The purpose of our work is to evaluate single-electron devices fabricated using resistive microstrips and to investigate its applicability for single-electron logic. In this article, we present our work on the fabrication and characterization of SETs with gold islands and CrOx resistive microstrips. The electron transport mechanism of CrOx resistors is also discussed and hypothesis of two types of possible junctions are given as the explanation for the experimental results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 36, Issues 3–6, March–June 2005, Pages 308-312
نویسندگان
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