کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9671907 | 1450490 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Anomalous temperature behavior of the excitonic emission of a 3 ML ultra-thin quantum well of CdSe
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Anomalous temperature behavior of the excitonic emission of a 3 ML ultra-thin quantum well of CdSe Anomalous temperature behavior of the excitonic emission of a 3 ML ultra-thin quantum well of CdSe](/preview/png/9671907.png)
چکیده انگلیسی
We present a study of the photoluminescence of a subnanometric three monolayers CdSe ultra-thin quantum well (UTQW), grown by atomic layer epitaxy (ALE), as a function of temperature. The sample exhibited quite intense green excitonic emission â¼2.40 eV at 14 K and â¼2.34 eV at room temperature, still very intense to the nude eye even under low power excitation. The peak energy of the emission presented an anomalous (S-shaped) behavior; initially a â¼6.5 meV red shift in the range from 65 to 105 K and then a â¼10.5 meV blue shift between 105 and 180 K, following afterwards the expected Varshni relation. Since the UTQW does not present emission related to thickness fluctuations we explain this evolution of the peak energy with temperature in terms of changes in the relative exciton population of regions with slightly different composition produced by ±1% fluctuations of Cd. These fluctuations are induced by the substitution of Cd atoms by Zn atoms in the QW/barrier interfaces.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 36, Issues 3â6, MarchâJune 2005, Pages 362-365
Journal: Microelectronics Journal - Volume 36, Issues 3â6, MarchâJune 2005, Pages 362-365
نویسندگان
Adrián Alfaro-MartÃnez, Isaac Hernández-Calderón,