کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9672139 1450564 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability
چکیده انگلیسی
In this paper, the TDDB lifetime of sub-100 nm single damascene structures is investigated to check the validity of the classical Poisson area scaling for BEOL dielectric reliability. A parameter RLN (ratio of line length over number of turnings) is defined to quantify the layout critical area contribution to the BEOL dielectric breakdown lifetimes. Structures with different RLN's, metal materials and layouts are compared. It is found that for similar layouts with different RLN's, the TDDB lifetime will deviate from the Poisson area-scaling trend.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 45, Issues 9–11, September–November 2005, Pages 1299-1304
نویسندگان
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