Robust, versatile, direct low-frequency noise characterization method for material/process quality control using cross-shaped 4-terminal devices

Low frequency (LF) noise measurement is a very sensitive tool for device quality and reliability monitoring. Despite of its potential interest, there are up to now relatively few LF noise studies combined and compared to standard reliability/quality analysis. One of the reasons is the difficulty to implement LF noise measurement on automatic wafer level testing. In this paper we promote a method using cross shaped 4 terminal devices (Hall crosses). The implementation of this method and its advantages over conventional noise measurement methods are described. This method, compatible with on-wafer probe testing, is of particular interest for material/processes quality control purposes especially for less mature material such as AlGaN/GaN Heterostructures.