کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9672168 | 1450564 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reliability improvement by the suppression of keyhole generation in W-plug vias
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
This paper describes a mechanism of failures in W-plug vias due to the keyhole generation, and presents the process conditions which enhance the reliability of W-plug vias. For a high aspect ratio via-hole, one of the limiting factors in the reliability of the W-plug is the generation of the keyholes. We have investigated the sensitivities of corresponding technologies and conditions to the generation of the keyholes during the plug process. They include deposition technologies of TiN and deposition conditions of W. Based on the SEM observation and the electromigration failure test, the process conditions of TiN and W have been optimized.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 45, Issues 9â11, SeptemberâNovember 2005, Pages 1455-1458
Journal: Microelectronics Reliability - Volume 45, Issues 9â11, SeptemberâNovember 2005, Pages 1455-1458
نویسندگان
Jong Hun Kim, Kyosun Kim, Seok Hee Jeon, Jong Tae Park,