کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9672196 1450564 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
On state breakdown in PHEMTs and its temperature dependence
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
On state breakdown in PHEMTs and its temperature dependence
چکیده انگلیسی
This work shows results of temperature-dependent (from −40 °C to 140 °C) on-state breakdown characterization of commercial PHEMTs from two vendors. Our data shows that in both samples impact ionization in the channel dominates the breakdown phenomenon and that a classical and simple analytical model can describe it with good accuracy. We have observed negligible temperature dependence of impact ionization in one of the samples, while the other shows moderate reduction of impact ionization with increasing temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 45, Issues 9–11, September–November 2005, Pages 1605-1610
نویسندگان
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