Trench insulated gate bipolar transistors submitted to high temperature bias stress

In this work we analyse the behavior of the Non Punch Through Trench Insulated Gate Bipolar Transistors submitted to High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) stresses. The electric stress has been accomplished during 1200 hours at 140 °C with 0.8 VCEmax Collector - Emitter bias (HTRB) and with VGE = −20 V or +20 V Gate Bias (HTGB). The results show the evolution of the static parameters as threshold voltage and on-state voltage drop and of switching parameters. The aim is to constitute a database as complete as possible for the analysis and diagnosis of failure causes related to the switching devices in power conversion systems.